The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2001
Filed:
Jun. 09, 2000
Takuya Ishikawa, Tokyo, JP;
Satoshi Arakawa, Tokyo, JP;
Toshikazu Mukaihara, Tokyo, JP;
Akihiko Kasukawa, Tokyo, JP;
The Furukawa Electric Co., Ltd., Tokyo, JP;
Abstract
A semiconductor light emitting diode (,) is formed on an n-type GaAs substrate and includes: an AlGaInP based double heterojunction structure in which an active layer (,) is sandwiched between cladding layers (,); an upper P-type contact layer,and a ring-shaped upper electrode (,) having an opening (,), wherein light is emitted through the upper p-type contact layer (,) and the opening (,) of the upper electrode (,). The upper p-type contact layer (,) is a semiconductor layer made of AlGaAs or AlGaAsP having an Al content of 0.5 or more, and doped with impurities at a carrier concentration of 5×10,cm,or more. The semiconductor light emitting diode emits light in a desired emission pattern and at higher intensities, and is capable of being fabricated by relatively simple processes.