The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2001
Filed:
Apr. 23, 1999
Applicant:
Inventors:
Christopher Harris, Sollentuna, SE;
Andrei Konstantinov, Järfälla, SE;
Susan Savage, Järfälla, SE;
Assignee:
Acreo AB, Kista, SE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/10312 ;
U.S. Cl.
CPC ...
H01L 3/10312 ;
Abstract
A field effect transistor of SiC for high temperature application has the source region layer (,), the drain region layer (,) and the channel region layer (,) vertically separated from a front surface (,), where a gate electrode (,) is arranged, for reducing the electric field at said surface in operation of the transistor and in the case of operation as a gas sensor permitting all electrodes except for the gate electrode to be protected from the atmosphere.