The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2001
Filed:
Jun. 24, 1999
Applicant:
Inventors:
Assignee:
LG Electronics Inc., Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
Method for fabricating a ferroelectric capacitor, including the steps of (1) foxing an etch stopper formed of any one of TiO,and RuO,a lower electrode, a ferroelectric layer, an upper electrode, and an etch mask layer formed of any one of Ti, Ru and Cr in succession on a substrate, (2) patterning the etch mask layer to a required form, (3) using the etch mask layer as a mask in etching the upper electrode, the ferroelectric layer, and the lower electrode at a time, to expose the etch stopper, and (4) removing the etch stopper and the etch mask layer, whereby allowing a simple and easy fabrication of the capacitor regardless of presence of steps.