The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2001
Filed:
Feb. 10, 2000
Junji Ohara, Toyota, JP;
Shinji Yoshihara, Nagoya, JP;
Kazuhiko Kano, Toyoake, JP;
Nobuyuki Ohya, Kariya, JP;
Denso Corporation, Kariya, JP;
Abstract
A method of manufacturing a semiconductor device, which can effectively form a trench having a high aspect ratio with relatively simple steps. An initial trench is formed in a silicon substrate by a reactive ion etching using an oxide film mask as an etching mask. After forming a protection oxide film on an inside surface of the trench, a part of the protection oxide film at which positions at a bottom surface of the trench is removed by a reactive ion etching, so that an etching of the silicon substrate is advanced through the bottom surface of the trench. Furthermore, the step for forming the protection oxide film and the step for re-etching the bottom surface of the trench are repeatedly performed, so that a depth of the trench becomes a predetermined depth. These steps are performed in a common chamber by using plasma processed with switching gases to be introduced to the chamber.