The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2001
Filed:
Jan. 21, 2000
Ting H. Yuan, Austin, TX (US);
Bob Anderson, Austin, TX (US);
Jin Zhao, Austin, TX (US);
Clive Jones, Austin, TX (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Various methods of fabricating a tungsten conductor structure are provided. In one aspect, a method of fabricating a tungsten conductor structure in an opening in an insulating film is provided that includes forming a titanium nitride film in the opening and heating the a titanium nitride film. The titanium nitride film is exposed to a flow of hydrogen gas and a flow of an inert carrier gas. The titanium nitride film is exposed to a flow of silane at a first flow rate for a first time interval and to a flow of tungsten hexafluoride for a second time interval that begins after the beginning but prior to the end of the first time interval. The flow of silane is reduced at the end of the first time interval to a second flow rate and maintained at the second flow rate for a third time interval. Fluorine diffusion into the titanium nitride film and the potential for void formation due to non-conformal tungsten deposition are reduced.