The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2001
Filed:
Jul. 18, 2000
Hyundai Electronics Industries Co., Ltd., Ichon-shi, KR;
Abstract
The present invention relates to a method of manufacturing a semiconductor device, which is capable of effectively removing a WO,film generated on a tungsten silicide during contact hole etch that opens a gate electrode including the tungsten silicide as its top film by selectively etching a interlayer insulating film. The WO,film is removed by a washing process using an alkaline solution such as TMAH(tetra-methyl-ammonium-hydroxide) or NH,OH solution. The effective removal of the WO,film reduces the contact resistance between a conductive material layer to be formed in the contact hole by a later process and the gate electrode, thereby improving the operative characteristics of the semiconductor device. TMAH solution used in the washing process has a high selectivity of WO,film relative to a thermal oxide film or a BPSG film that is generally used as the interlayer insulating film. Thus, the present invention is capable of minimizing the damage of the side parts of the interlayer insulating film during the washing process after contact etching.