The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2001
Filed:
Mar. 25, 1998
Hiroyuki Naganuma, Kawasaki, JP;
Shinji Sugatani, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
The method for fabricating a semiconductor device comprises an insulation film forming step of forming an insulation film,on a semiconductor substrate,, a semiconductor layer forming step of forming a semiconductor layer,on the insulation film,, and an impurity implanting step of implanting an impurity containing hydrogen into the semiconductor layer,, the method being characterized by further comprising a fluorine implanting step of implanting fluorine in at least the insulation film,. The dangling bonds of the insulation film can be bonded with the fluorine, whereby the fluorine, which has higher bonding energy with respect to silicon of the insulation film than hydrogen, is never dissociated from the silicon of the insulation film in the following heat treatments, BT stress test, etc. Accordingly, an interface state density in the interface between the insulation film and the semiconductor substrate can be depressed low, and a fixed charge in the insulation film can be depressed small. The semiconductor device and the method for fabricating the same can be reliable. The fluorine ion dose is suitably set to thereby prevent the insulation film from thickening. The method for fabricating a semiconductor device having good electric characteristics can be provided.