Elimination of n+ implant from flash technologies by replacement with standard medium-doped-drain (mdd) implant

Abstract

A method of manufacturing a semiconductor device that eliminates the N,implant by replacement with resist spacers on n-channel gate structures and a standard Mdd implant. The N,implant is thereby eliminated from the n-channel transistors and is replaced by an Mdd implant. The Mdd implant is simultaneously implanted into the core transistors and portions of the n-channel transistors unprotected by the resist spacers. The p-channel transistors are then implanted with a PLdd implant, the n-channel transistors are then planted with an NLdd implant, sidewall spacers are formed on all gate structures, the p-channel transistors are implanted with a P,implant and the N,and P,contacts are then formed.