The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2001
Filed:
Apr. 09, 1997
Applicant:
Inventor:
Joo-hyung Lee, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/131 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/131 ; H01L 2/1469 ;
Abstract
A thin film transistor including a gate, a source, and a drain is formed on a substrate. An insulating film containing H,O is formed on the thin film transistor. For example, spin-on glass (SOG) containing H,O may be used. H,O contained in the insulating film is diffused through the thin film transistor by performing thermal processing on the insulating film. Trapping centers in the polysilicon may therefore be reduced.