The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2001
Filed:
Sep. 07, 1999
Chorng-Jye Huang, Tainan Hsien, TW;
Cheng-Ting Chen, Taipei Hsien, TW;
Chien-sheng Huang, Hsinchu, TW;
Lee-Ching Kuo, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
This invention discloses a novel method for fabricating solar cells. Using the existing screen-printing, masking or photolithography techniques, a P-type or N-type diffusion source is coated on the sites of an N-type or P-type silicon wafer desired for forming electrodes. Then, a low dose P-type or N-type diffusion source is in situ diffused into the N-type or P-type silicon wafer together with the P-type or N-type diffusion source coated on the N-type or P-type silicon wafer in the furnace. Thereafter, a P,/P,or N,/N,diffusion region is formed within the N-type or P-type silicon wafer. Finally, electrodes aligned to the P,or N,diffusion region are formed by means of screen-printing. Then, a solar cell with high photocurrent and low series resistance can be obtained.