The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2001
Filed:
Oct. 13, 1999
Applicant:
Inventor:
Yasuhisa Yamada, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 ;
U.S. Cl.
CPC ...
G03F 9/00 ;
Abstract
Disclosed is a method for making a partial full-wafer pattern for charged particle beam lithography based on circuit design data. This method has the steps of: conducting the interlayer operation between the circuit design data of a pattern of lithographed layer and the circuit design data of a pattern of base layer underlying the lithographed layer to extract a product-set pattern; and making data of partial full-wafer pattern by setting the product-set pattern to be a target region of partial full-wafer pattern.