The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2001
Filed:
Jun. 02, 1999
Shinsuke Sadamitsu, Saga, JP;
Tooru Nagashima, Saga, JP;
Yasuo Koike, Kashima, JP;
Masaharu Ninomiya, Kishima-gun, JP;
Takeshi Kii, Fukudomi-machi, JP;
Sumitomo Metal Industries, Ltd., Osaka, JP;
Abstract
A method for manufacturing semiconductor silicon epitaxial wafer and semiconductor device by which a gettering ability can be given to an epitaxial wafer in which the formation of BMD is not able to be expected in both low- and high-temperature device manufacturing processes, with the manufacturing processes being lower and higher than 1,050° C. in temperature, and has a specific resistance of ≧10 m&OHgr;·cm. When this method is used, such BMD that is sufficient to obtain gettering can be formed in both the low- and high-temperature processes, with the manufacturing processes being lower and higher than 1,050° C. in temperature, even in the epitaxial wafer having a specific resistance of ≧10 m&OHgr;·cm by performing low-temperature heat treatment at 650˜900° C. before starting epitaxial film formation, by selecting the heat-treating time in accordance with the process temperature in the device manufacturing processes and heavy-metal contaminants which are mixed in during the device manufacturing processes can be gettered sufficiently. Therefore, the characteristic deterioration of a device can be prevented and the yield of the device can be improved.