The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2001
Filed:
Jan. 28, 1999
Applicant:
Inventors:
Yutaka Nagai, Tokyo, JP;
Yutaka Mihashi, Tokyo, JP;
Motoharu Miyashita, Tokyo, JP;
Yasutomo Kajikawa, Shimane, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 ; H01L 2/120 ; H01L 2/136 ;
U.S. Cl.
CPC ...
H01S 5/00 ; H01L 2/120 ; H01L 2/136 ;
Abstract
A semiconductor laser device on a GaAs substrate and having an oscillation wavelength of 1.3 &mgr;m or 1.55 &mgr;m and a method of producing the laser device. The laser device has a BTlGaAs active layer that lattice matches with the GaAs substrate. To grow the BTlGaAs active layer, organometallic vapor phase deposition is employed with cyclopentadienyl thallium as the source of Tl.