Cmos device and circuit and method of operation dynamically controlling threshold voltage

Abstract

A CMOS device fabricated in a silicon-on-insulator structure and including circuitry and methods in a first embodiment dynamically shifts the threshold voltage of the CMOS device in a receiver to provide improved noise margin and in a second embodiment dynamically matches the threshold voltages in a differential amplifier to correct for manufacturing offset. To dynamically shift the threshold voltage for noise immunity, the back gate or bulk nodes of the devices is shifted through two similar circuits comprised of npn inverters with clamping devices. The back gate of the n device is biased at 0 volts for the maximum Vth and is biased at +1 threshold for the minimum Vth of the device. Only the back gate of the p device is biased at Vdd for the maximum Vth of the device and is biased at 1 Vth below Vdd for the minimum Vth of the device. The Vth of the n device and the p device should be less than the forward bias of the respective source volt junctions to prevent unwanted bipolar currents. By driving the back gates in opposite direction and in phase with the input to the receiver circuit, the threshold voltage of the receiver is moved away from ground (GND) when the input is at a logical “0” and way from Vdd when the input is at a logical “1” which raises the noise immunity of the receiver and speeds the response of the receiver to a desired signal To dynamically match a differential pair for offset correction, a feedback circuit performs a Fast Fourier Transformer analysis of the output signal to determine the presence of even harmonics. A feedback voltage is generated representative of the even harmonics and applied to the back bias contacts of the CMOS devices to correct the effects of the threshold mismatch in the differential pair.