The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2001
Filed:
Apr. 17, 1998
Applicant:
Inventor:
Kouichi Hasegawa, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7082 ; H01L 2/940 ;
U.S. Cl.
CPC ...
H01L 2/7082 ; H01L 2/940 ;
Abstract
A semiconductor integrated circuit has a protective NMOS transistor having a drain and a source respectively electrically connected to a first interconnection (electrically connected to a base electrode of a bipolar transistor or a gate electrode of a MOS transistor) and ground and a gate electrode in a floating state, upon formation of the first interconnection. The first interconnection is formed by patterning using plasma etching and is connected to ground after the formation of the first interconnection.