The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2001
Filed:
Nov. 19, 1999
Wilm E. Donath, New York, NY (US);
Dennis M. Newns, Yorktown Heights, NY (US);
Pratap C. Pattnaik, Ossining, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method and structure for a field effect transistor (FET) includes a source region, a drain region, a channel region extending between the source region and the drain region, a gate region, and a gate oxide region separating the gate region from other regions of the FET. The channel region is a Mott insulator. The gate oxide region is thicker than the channel region, and the gate oxide region includes a higher dielectric permittivity than the Mott insulator material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile