The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2001
Filed:
Oct. 23, 1998
Mikio Mukai, Kanagawa, JP;
Yutaka Hayashi, Ibaraki, JP;
Sony Corporation, Tokyo, JP;
Abstract
A semiconductor memory cell comprising a first transistor of a first conductivity type for read-out, a second transistor of a second conductivity type for write-in and a junction-field-effect transistor of the first conductivity type for current control; the first transistor having source/drain regions constituted of a first region and a fourth region, and a channel forming region constituted of a surface region of a third region; the second transistor having source/drain regions constituted of a second region and the third region, and a channel forming region constituted of a surface region of the first region; the junction-field-effect transistor having gate regions constituted of the fifth region and a portion of the third region facing the fifth region, a channel region constituted of part of the fourth region sandwiched by the fifth region and said portion of the third region, and source/drain regions constituted of the fourth region.