The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2001
Filed:
Jun. 30, 1999
Applicant:
Inventor:
Brian S. Mo, Stanford, CA (US);
Assignee:
Fairchild Semiconductor Corporation, South Portland, ME (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ;
Abstract
A trench structure that is substantially filled with high-conductivity material such as refractory metal particularly suitable for fast switching trench MOSFET applications. The trench is first lined by a dielectric material such as silicon dioxide. A layer of polysilicon is then formed on the dielectric material and provides buffering for stress relief. The trench is then filled substantially with refractory metal such as tungsten.
Mo, Brian. (2001). Trench structure substantially filled with high-conductivity material (U.S. Patent No. 6274905). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6274905
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile