The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2001
Filed:
Jun. 11, 1999
Applicant:
Inventors:
Tsutomu Igarashi, Yamanashi, JP;
Kenji Arimochi, Yamanashi, JP;
Teruo Yokoyama, Yamanashi, JP;
Eizo Mitani, Yamanashi, JP;
Shigeru Kuroda, Yamanashi, JP;
Junichiro Nikaido, Yamanashi, JP;
Yasunori Tateno, Yamanashi, JP;
Assignee:
Fujitsu Quantum Devices Limited, Nakakoma-gun, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/1072 ; H01L 3/1109 ; H01L 3/10328 ; H01L 3/10336 ;
U.S. Cl.
CPC ...
H01L 3/1072 ; H01L 3/1109 ; H01L 3/10328 ; H01L 3/10336 ;
Abstract
The impurity concentration contained in a layer on an electron supply layer of a high electron mobility field effect transistor is set in the range of 1×10,to 1×10,atoms/cm,, or the bandgap of a Schottky layer is set wider than that of the electron supply layer.