The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2001
Filed:
Mar. 09, 1998
Francis J. Kub, Arnold, MD (US);
Victor Temple, Clifton Park, NY (US);
Karl Hobart, Upper Marlboro, MD (US);
John Neilson, Norristown, PA (US);
Intersil Americas Inc., Irvine, CA (US);
Abstract
One embodiment of a semiconductor device includes a laterally extending semiconductor base, a buffer adjacent the base and having a first conductivity type dopant, and a laterally extending emitter adjacent the buffer and opposite the base and having a second conductivity type dopant. The buffer is relatively thin and has a first conductivity type dopant concentration greater than a second conductivity type dopant concentration in adjacent emitter portions to provide a negative temperature coefficient for current gain and a positive temperature coefficient for forward voltage for the device. The buffer may be silicon or germanium. A low temperature bonded interface may be between the emitter and the buffer or the buffer and the base. Another embodiment of a device may include a laterally extending localized lifetime killing portion between oppositely doped first and second laterally extending portions. The localized lifetime killing portion may comprise a plurality of laterally confined and laterally spaced apart lifetime killing regions. Another device may include one or more PN junctions.