The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2001
Filed:
Mar. 08, 2000
Yih-Feng Chyan, Orlando, FL (US);
Yi Ma, Orlando, FL (US);
Lucent Technologies Inc., Murray Hill, NJ (US);
Abstract
The present invention provides a method of passivating a semiconductor device having a capping layer formed thereover, comprising: (1) subjecting the semiconductor device to a high pressure within a pressure chamber and (2) exposing the semiconductor device to a passivating gas. The high pressure causes the passivating gas, such as a deuterated passivating gas, to penetrate the capping layer and thereby passivate the semiconductor device. The method provided by the present invention is, therefore, particularly useful in those instances where a final passivation step is desired after the formation of the capping layer. It is believed that the hydrogen isotope bonds to dangling bond sites within the semiconductor device, which are most often present at a silicon/silicon dioxide interface. Further, because of their larger mass, these hydrogen isotope atoms are not easily removed by electron flow during the operation of the device as is the case with the lighter hydrogen atoms.