The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2001
Filed:
Jun. 17, 1999
Applicant:
Inventors:
Jose A. Delgado, Valkaria, FL (US);
Craig J. McLachlan, Valkaria, FL (US);
Assignee:
Intersil Corporation, Palm Bay, FL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1322 ;
U.S. Cl.
CPC ...
H01L 2/1322 ;
Abstract
The present invention induces provides a gettering trench on the front surface of a device substrate. In one embodiment it induces stress and simultaneously forms a gettering zone,for gettering impurities in an integrated circuit structure. In another embodiment, the trench is filled with gettering material,such as polysilicon. The two gettering mechanisms may be combined,. The invention is useful for providing gettering in bonded wafers and in silicon-on-insulator devices (FIGS.,).