The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2001
Filed:
Aug. 11, 1994
Applicant:
Inventor:
Masaharu Hamasaki, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1339 ;
U.S. Cl.
CPC ...
H01L 2/1339 ;
Abstract
The present invention is directed to a method of manufacturing a semiconductor device in which ion implantation of impurities is carried out at energy of 0.7 to 16 MeV and the impurities are diffused by heat treatment during a period in which a diffusion time calculated in terms of 1100° C. is within 10 hours to thereby form wells. Therefore, a heat treatment time for forming wells of semiconductor devices such as CCD, CMOSIC or the like can be reduced.