The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2001
Filed:
Jun. 14, 1999
Applicant:
Inventors:
Gérald Dujardin, Châtenay-Malabry, FR;
Andrew Mayne, Antony, FR;
Fabrice Semond, Monguis-le-Haut, FR;
Patrick Soukiassian, St. Remy les Chevreuse, FR;
Assignee:
Other;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/104 ;
U.S. Cl.
CPC ...
H01L 2/104 ;
Abstract
Atomic wires of great length and great stability are formed on the surface of a SiC substrate as straight chains of dimers of an element chosen from amongst SiC and C. In order to produce same, layers of the element are formed on the surface and the assembly is constructed by means of annealings of the surface provided with the layers. The resulting wires have application to nanoelectronics.
Dujardin, Gérald. (2001). Very long and highly stable atomic wires, method for making these wires, application in nano-electronics (U.S. Patent No. 6274234). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6274234
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile