The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2001
Filed:
Oct. 04, 1999
Applicant:
Inventor:
Pablo Eugenio D'Anna, Los Altos, CA (US);
Assignee:
Xemod, INC, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/1113 ; H01L 2/994 ;
U.S. Cl.
CPC ...
H01L 3/1113 ; H01L 2/994 ;
Abstract
The lateral RF MOS device having two drain drift regions and a conductive plug source connection structure is disclosed. The usage of two drain drift regions results in the increased source-drain breakdown voltage and in increased maximum drain current density. The lateral RF MOS device of the present intention can be used for high power and high frequency applications.