The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2001
Filed:
Aug. 16, 1999
Applicant:
Inventor:
Andreas Gehrmann, Dortmund, DE;
Assignee:
Elmos Semiconductor AG, Dortmund, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/980 ;
U.S. Cl.
CPC ...
H01L 2/980 ;
Abstract
In a channel well of a semiconductive substrate, source, drain and gate electrodes are formed. Below the gate electrode region, a plurality of partial regions of the second conductive type are arranged next to each other in the direction of the extension of the gate electrode region and in a mutually spaced relationship, said partial regions bordering on the gate electrode region and extending through the channel well region into the region of the substrate bordering on the channel well region from below.
Gehrmann, Andreas. (2001). Junction field effect transistor or jfet with a well which has graded doping directly beneath the gate electrode (U.S. Patent No. 6271550). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6271550
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile