The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2001
Filed:
Jul. 21, 1998
Applicant:
Inventors:
Assignee:
National Science Council, Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/10312 ;
U.S. Cl.
CPC ...
H01L 3/10312 ;
Abstract
This invention is a novel silicon carbide and silicon (SiC/Si) heterostructure N-shaped negative-differential-resistance semiconductor switch having low power dissipation and large on/off current ratio. The structure of the semiconductor switch includes Al electrode/p-type single crystal silicon carbide layer/graded-composition layer/n-type single crystal silicon substrate/Al electrode (Al/p-SiC/GCL/n-Si/Al), wherein the graded-composition layer is a buffer layer between the p-SiC and n-Si layers.