The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2001
Filed:
Dec. 30, 1999
Yasuo Yamaguchi, Tokyo, JP;
Hidekazu Yamamoto, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device is provided which is capable of removing the heavy metal impurity in a SOI layer by gettering, and realizing an improvement in breakdown voltage and reliability. The semiconductor device comprises polysilicon regions functioning as a gettering site, which are selectively formed in a buried fashion, such as to make no contact with a gate insulating film and an element isolation insulating film, in a main surface of part of a SOI layer where a drain region and a source region are disposed; and contact holes being filled with polysilicon plug functioning as a gettering site, and extending through an interlayer insulating film between an upper surface of the interlayer insulating film and an upper surface of the polysilicon regions.