The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2001
Filed:
Jun. 10, 1999
Qizhi Liu, Santa Ana, CA (US);
David Feiler, Sherman Oaks, CA (US);
Bin Zhao, Irvine, CA (US);
Maureen R. Brongo, Laguna Hills, CA (US);
Conexant Systems, Inc., Newport Beach, CA (US);
Abstract
Method for dual damascene metallization of semiconductor workpieces which uses a process for creating an etch stop in an insulator thereby eliminating the need for deposition of an etch stop layer. Electron beam exposure is used to cure the insulator, or material having a low dielectric constant. Application of the electron beam to the low dielectric constant material converts the topmost layer of the low dielectric constant material to an etch stop layer, while rapid thermal heating cures the remainder of the low dielectric constant material. Creation of an etch stop layer in the low dielectric constant material can also be achieved by curing the low dielectric constant material using ion implantation.