The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2001
Filed:
Mar. 11, 1999
Koji Kishimoto, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method for making a semiconductor device which has the steps of: (A) forming insulating film on a semiconductor substrate and then a plurality of lower wirings on the insulating film; (B) forming first insulating film with an overhang form to cover the surface of the lower wirings and the insulating film by using a plasma enhanced chemical vapor deposition method; (C) forming organic-included coating insulating film on the first insulating film by using a rotational coating method, (D) baking the organic-included coating insulating film; (E) etching back a part of the organic-included coating insulating film by using a dry-etching method; (F) forming second insulating film on the first insulating film and the organic-included coating insulating film by using the plasma enhanced chemical vapor deposition method; (G) polishing the second insulating film by using a chemical mechanical polishing method to planarize the surface, (H) etching a predetermined part of the first insulating film and the second insulating film to form a hole to reach the lower wirings; and (I) burying a metal material into the hole.