The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2001
Filed:
Aug. 06, 1999
Applicant:
Inventors:
Manijeh Razeghi, Wilmette, IL (US);
Patrick Kung, Evanston, IL (US);
Assignee:
MP Technologies, Wilmette, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/120 ;
Abstract
The subject invention involves a method of preparing defect-free semiconductor material layers by growing a semiconductor material buffer layer on a substrate, masking with a dielectric film, and etching to open spaced seed windows. Another layer of a III-V or II-VI material is then grown in the longitudinal direction from the seed window, followed by lateral growth of the same material to form an epitaxial film and a structure which provides a defect free surface for further epitaxial layers.
Razeghi, Manijeh. (2001). Fabrication of defect free iii-nitride materials (U.S. Patent No. 6271104). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6271104
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile