The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2001
Filed:
Mar. 12, 1998
Applicant:
Inventors:
Kensaku Motoki, Hyogo, JP;
Masato Matsushima, Hyogo, JP;
Katsushi Akita, Hyogo, JP;
Mitsuru Shimazu, Hyogo, JP;
Kikurou Takemoto, Hyogo, JP;
Hisashi Seki, Tokyo, JP;
Akinori Koukitu, Tokyo, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/912 ;
U.S. Cl.
CPC ...
H01L 2/912 ;
Abstract
The present invention provides an epitaxial wafer comprising a (111) substrate of a semiconductor having cubic crystal structure, a first GaN layer having a thickness of 60 nanometers or more, a second GaN layer having a thickness of 0.1 &mgr;m or more and a method for preparing it.