The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2001
Filed:
Sep. 04, 1998
Deepika B. Singh, Gainesville, FL (US);
Moltech Power Systems, Inc., Alachua, FL (US);
Abstract
A formation procedure for a NiMH electrochemical cell is disclosed that significantly shortens the time required to fully form such a cell. The formation procedure includes a first step during which the cell is charged at a constant voltage of preferably 1.0 volt for approximately three hours. A second charging step is performed by applying either a constant charge current at a predetermined rate of C/3 for five hours or applying a constant voltage of 1.45 to 1.5 volts for five to nine hours. A third step may optionally be used whereby the cell is charged at a constant current of C/10 for about two hours. NiMH cells subjected to this formation procedure have a much greater percentage of the starting cobalt material in the positive electrode converted to CoOOH thereby improving the conductive matrix formed about the Ni(OH),/NiOOH particles, which constitute the active material of the positive electrode. The disclosed inventive formation procedures result in higher utilization, higher cell capacities following long-term storage, or storage at high temperatures as well as improved capacity recovery following deep discharge.