Threshold voltage setting circuit for reference memory cell and method for setting threshold voltage using the same

Abstract

Threshold voltage setting circuit for a reference memory cell for immediate and accurate setting of a threshold voltage without time consumption; and a method for setting a threshold voltage using the same, the circuit including a reference memory cell having a source, a drain, a floating gate and a control gate, a first power source for applying a voltage to the drain of the reference memory cell under the control of the current detector when the reference memory cell is programmed, a second power source for supplying a voltage to the control gate of the reference memory cell when the reference memory cell is programmed or read, a third current connected to the source of the reference memory cell, a switch connected to the drain of the reference memory cell for controlling a path for external measuring of a current flowing to the reference memory cell in response to a measuring signal, and a current detector connected between the first power source and the drain of the reference memory cell for providing a stop signal to the first and second power sources to stop the programming of the reference memory cell forcibly when a current to the reference memory cell, which is monitored during the programming of the reference memory cell in response to a program signal, is the same with a reference stop current.