The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2001
Filed:
Jan. 25, 1999
Applicant:
Inventors:
Luc Ouellet, Granby, CA;
Yves Tremblay, Bromont, CA;
Assignee:
Mitel Corporation, Kanata, CA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/972 ;
U.S. Cl.
CPC ...
H01L 2/972 ;
Abstract
A method of making a semiconductor device, comprises the steps of providing an insulating layer, forming a series of holes in the insulating layer, depositing a first layer of a metal, or a compound thereof, on the insulating layer such and in the holes, forming a dielectric layer on the first layer, the dielectric consisting of a compound of the metal, and forming a second layer of the metal, or a compound thereof, on the dielectric layer. The first, second and dielectric layers form a conformal capacitive sandwich structure extending into the holes.