The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2001
Filed:
May. 27, 1994
Applicant:
Inventors:
Mitsuru Taguchi, Tokyo, JP;
Keiichi Maeda, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
A method of forming wirings which comprises forming a film of a silicon-containing metal layer at a high temperature on an underlying metals, thereby forming a silicon alloy layer comprising the underlying metal and the silicon-containing metal during film formation. In a case of forming wirings by a silicon-containing metal layer occurrence of Si nodules can be eliminated to obtain wirings of high reliability.