The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2001
Filed:
Dec. 21, 1998
Applicant:
Inventors:
Lap Chan, San Francisco, CA (US);
Kheng Chok Tee, Selanger, MY;
Kok Keng Ong, Singapore, SG;
Chin Hwee Seah, Singapore, SG;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ; H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/14763 ; H01L 2/176 ;
Abstract
A new method of forming air gaps between adjacent conducting lines of a semiconductor circuit by using a “holes everywhere” or a “reverse metal holes” mask that can be used to create holes in a dielectric layer. The dielectric that is being etched has been deposited across conducting lines, the holes that are being formed in this manner are closed by depositing a dielectric across the top of the holes. The holes can be etched across the entire layer of the deposited dielectric or can be etched in between the conducting lines.