The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2001
Filed:
Sep. 21, 1999
Shigenari Ukita, Thuchiura, JP;
Takayuki Niuya, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method for fabricating a memory cell includes forming a first access line (,) for a storage node (,) and forming a second access line (,) operable to access the storage node (,) in connection with the first access line (,). The first access line (,) includes a first terminal (,) and a second terminal (,). The second access line (,) includes a conductive layer (,) connected to the first terminal (,) of the first access line (,). An opening (,) is formed in the second access line (,) for connection of the storage node (,) to the second terminal (,) of the first access line (,). A sidewall (,) is formed in the opening (,) to form a contact hole (,) insulated from the conductor (,) of the second access line (,). The storage node (,) is formed having a self-aligned contact (,) formed in the contact hole (,) and connected to the second terminal (,) of the first access line (,).