The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2001
Filed:
Jun. 26, 1998
Ernesto Esteban Marinero, Saratoga, CA (US);
Timothy Martin Reith, Morgan Hill, CA (US);
Brian Rodrick York, San Jose, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A improved thin film recording medium with an underlayer with deliberately induced strain, crystalline defects and dislocations (collectively “faults”) in the grain structure is described. The relatively high number of induced faults results in surprising improvements in recording characteristics such as soft error rate, resolution and SNR of the thin film disk. While the film is being deposited, the sputtering conditions are controlled to grow grains of the underlayer material which tend to be highly faulted by incorporation of atoms of a second material with significantly different atomic characteristics than the underlayer material. Preferably the atoms of the sputtering gas species are incorporated in the film to cause the lattice faults. For example, the faults can be achieved by incorporating sputtering gas atoms, e.g. argon atoms, into a chromium based underlayer.