The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 31, 2001

Filed:

Nov. 17, 1998
Applicant:
Inventors:

En Lai Zhang, Chiba, JP;

Satoshi Yamamoto, Chiba, JP;

Takayoshi Numata, Chiba, JP;

Kiyoshi Sugie, Chiba, JP;

Assignee:

Teijin Limited, Osaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B65D 8/530 ; B65D 1/36 ; B65D 6/04 ; C08G 6/312 ;
U.S. Cl.
CPC ...
B65D 8/530 ; B65D 1/36 ; B65D 6/04 ; C08G 6/312 ;
Abstract

The present invention relates to a silicon wafer carrier consisting of a composition composed of (a) 100 parts by weight of a polyester, (b) 5 to 100 parts by weight of a polyether ester amide, (c) 10 to 2,500 ppm (based on the polyether ester amide) of an alkaline metal and (d) 0 to 40 parts by weight of a modified polyolefin, generating not more than 10 ppm of volatile gas by the heat-treatment at 150° C. for 60 minutes and eluting not more than 10 ppm of the alkaline metal by the immersion treatment in pure water at 80° C. for 120 minutes. The silicon wafer carrier has the generation of volatile gas and the elution of metal suppressed to an extent not to essentially cause the surface contamination of a silicon wafer and is provided with excellent permanent antistaticity and high mechanical properties and heat-resistance.


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