The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2001
Filed:
Mar. 23, 1999
Applicant:
Inventor:
Teruo Izumi, Amagasaki, JP;
Assignee:
Sumitomo Sitix Corporation, Amagasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
C30B 1/520 ;
U.S. Cl.
CPC ...
C30B 1/520 ;
Abstract
This is a method for growing by pulling single crystals,using CZ process from material melt,to which cusp magnetic field is applied. Inside diameter U of the crucible,that contains the material melt,is (Y+140 mm) or larger and less than 3Y, where Y stands for outside diameter of the single crystal,. When cusp magnetic field is applied, high pulling yield is maintained even if the inside diameter U of the crucible is small. Oxygen yield and dislocation free yield are improved by reducing inside diameter U of the crucible. As a result, the yield of manufacturing single crystals,is improved.