Nonvolatile semiconductor memory device, method for reading data from the nonvolatile semiconductor memory device, and method for writing data into the nonvolatile semiconductor memory device

Abstract

An object is to obtain a nonvolatile semiconductor memory device which can achieve a reduction in processing time required for data writing operation and an increase in storage density through the use of multi-valued MOS transistors. In operation for writing data into cells, the amount of charge injected into the floating gates is controlled so as to set the threshold voltages of the MOS transistors at all different values. When reading data from the cells, the data is read by determining whether the threshold voltages of the MOS transistors are higher or lower relative to each other.