The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 24, 2001

Filed:

Jul. 28, 1997
Applicant:
Inventors:

Makoto Mizuno, Utsunomiya, JP;

Masanori Iwahashi, Utsunomiya, JP;

Toshihiro Shimizu, Utsunomiya, JP;

Masaaki Fujishima, Utsunomiya, JP;

Koji Hanihara, Isawa-cho, JP;

Itaru Tsuchiya, Shikishima-cho, JP;

Yasuo Yagi, Kawasaki, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1345 ; H01L 2/348 ;
U.S. Cl.
CPC ...
G02F 1/1345 ; H01L 2/348 ;
Abstract

An uppermost metal wiring layer is formed of titan Ti and titan nitride TiN formed thereon, on which tungsten W for filling a via hole can be deposited. The via hole is filled with W. The surface of a metal wiring layer below the uppermost metal wiring layer is covered with a low reflectivity film made of titan nitride. Thus, light incident on the surface of the semiconductor chip is prevented from reaching a substrate transistor within a semiconductor device and malfunctioning of the semiconductor device is prevented.


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