The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2001
Filed:
Jul. 14, 1998
Peter James Dobson, Oxford, GB;
Gareth Wakefield, Oxford, GB;
Isis Innovation Limited, , GB;
Abstract
The light emitter is fabricated from a silicon substrate (,) that has a layer of porous silicon (,) on its upper surface. A hole transporter (,) is applied to the upper surface of the porous silicon (,) and penetrates the channels (,′) formed within the porous silicon. An upper semitransparent p-type material such as NiO is used as the upper contact (,) to the hole transporter and a further contact is formed on the base of the silicon wafer (,). The penetration of the hole transporter into the interstices between the silicon particles significantly improves the efficiency of the light emitter by up to two orders of magnitude. The light emitter is particularly suited to use in VLSI and display applications.