The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 24, 2001

Filed:

Feb. 03, 2000
Applicant:
Inventor:

Isao Tottori, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/358 ; H01L 2/342 ; H01L 2/348 ;
U.S. Cl.
CPC ...
H01L 2/358 ; H01L 2/342 ; H01L 2/348 ;
Abstract

A semiconductor device with a multi-level interconnection structure has a first conductive layer disposed below a fuse, and formed in the same layer as the first metal wire as a component of multi-level interconnects, and a second conductive layer disposed below the fuse and formed in the same layer as the second metal wire as a component of the multi-level interconnects. A laser beam control unit is configured with the first and second conductive layers. Thus, damage occurrence in a semiconductor substrate may be controlled during blowing the fuse, a quality deterioration and further a defective of the semiconductor device may be not only avoided, but also an integration degree thereof may be enhanced.


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