The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2001
Filed:
Aug. 09, 1999
Thierry Ducourant, Voiron, FR;
Thomson Tubes Electroniques, Velizy Villacoublay, FR;
Abstract
An integrator circuit for photogenerated charges which limits linearity defects. The circuit includes an integration capacitor with a first blade connected to a reference potential and a second blade having a variable potential which receives photogenerated charges. The circuit also includes a resetting MOS transistor of a first type connected to the variable potential at one terminal and to a supply potential on another. The MOS transistor represents a straight capacitance in parallel with the integration capacitor. One or more MOS transistors of a second type are connected to the variable potential and each have a stray capacitance in parallel with the integration capacitor. A variation in the voltage across the terminals of the integration capacitor causes a variation in the value of the straight capacitances of the MOS transistors of the second type which tends to compensate for the variation in the stray capacitance of the MOS transistor of the first type.