The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2001
Filed:
Jun. 03, 1992
William L. Ahlgren, Goleta, CA (US);
Raytheon Company, Lexington, MA (US);
Abstract
A semiconductor device comprises an active element and contacts that permit low-resistance external electrical connections. The active element includes an active layer formed from group II-VI elements, an n-doped layer on one side of the active it layer, and a p-doped layer on the other side of the active layer. The p-doped layer is a ZnSe-based alloy or a ZnTe-based alloy. There are electrical contacts to the n-doped layer and to the p-doped layer. The electrical contact to the p-doped layer includes a graded-alloy contact layer in epitaxial contact with the p-doped layer and whose bandgap varies from about that of the p-doped layer adjacent the p-doped layer to about zero at a location remote from the p-doped layer. The graded-alloy contact layer is a HgZnSSe-based graded-composition alloy where the p-doped layer is a ZnSe-based alloy, or a HgZnSeTe-based graded-composition alloy where the p-doped layer is a ZnTe-based alloy.