The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2001
Filed:
May. 20, 1999
Tsuyoshi Tsutsui, Kyoto, JP;
Shunji Nakata, Kyoto, JP;
Yasuo Miyano, Kyoto, JP;
Koutarou Ogura, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
A mask,for vapor deposition is made of glass. Through-holes,are formed in the glass mask,so that they make a prescribed pattern on the surface of a semiconductor substrate,The peripheral wall of the through-hole is tapered so that the opening face,from which evaporated atoms are introduced is larger than the opening face,facing the deposition surface of the semiconductor substrate. The evaporated metal atoms having flied aslant toward the opening face,from which the evaporated atoms are introduced can pass through the through-hole,so that the evaporated metal atoms are deposited on the deposition surface of the semiconductor substrate. A desired thin film pattern inclusive of an electrode pattern can be easily formed on the surface of a semiconductor substrate, thereby improving the production yield of a semiconductor device.