The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2001
Filed:
Oct. 05, 1998
Applicant:
Inventor:
Kazuyoshi Yoshida, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1311 ;
U.S. Cl.
CPC ...
H01L 2/1311 ;
Abstract
A method of forming a trench in a semiconductor substrate by gas plasma etching having the steps of detecting and analyzing emission spectrums of gas plasma etching products and controlling the gas plasma etching based on the ratio of the emission spectrums. The etching uses a HBr/O,gas. The ratio of emission spectrums is preferable from 1 to 2.