The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2001
Filed:
Jun. 09, 1998
Applicant:
Inventors:
Hang Thi Yen Black, Austin, TX (US);
Edward E. Ehrichs, Austin, TX (US);
Assignee:
Advanced Micro Devices, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
The present invention is directed to a method for manufacturing semiconductor devices. The method generally comprises forming a plurality of process layers on a wafer,. The wafer has an edge region,with a number of defects,existing thereon. Thereafter, the method comprises removing all or a substantial portion of the defects,on the edge region,of the wafer